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Title: Designing Switched- Mode Power Supplies with GaN and SiC Semiconductors
Original Broadcast Date: September 15, 2021

The rise of wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) devices will drive the next generation of power electronics technology. Wide bandgap semiconductors allow for greater power efficiency, smaller size, lighter weight, and eventually lower overall cost in the electronic devices that run our world. They enable power converters such as switched-mode power supplies (SMPS) to operate at higher switching speeds which allows magnetics and capacitors to be smaller and lighter. However, these higher switching speeds also bring about new design and simulation challenges. Higher switching speeds can generate large voltage spikes because of the layout parasitics. Specifically, the inductance of the printed circuit board (PCB) traces can cause voltage spikes in the presence of high di/dt values. Higher switching speed can also generate unwanted conducted and radiated electromagnetic interferences also known as EMI. When unaccounted for, these factors could cause the SMPS design to fail. To overcome these challenges, designers need to incorporate a new design workflow. This new workflow must include post-layout simulation which integrates both circuit and EM analysis. 

  • Learn about wide bandgap semiconductors and their role in power electronics
  • Understand the new design challenges of wide bandgap semiconductors in switched-mode power supplies
  • Learn a new Electromagnetic (EM) workflow to overcome these challenges
  • Understand how a digital reference design can accelerate your time to market
  • See Keysight's solution in action (PathWave ADS and PEPro and Reference Designs)
Steven Lee
Steven Lee
Power Electronics Product Planner
Keysight Technologies

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