Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are driving the next generation of Switched Mode Power Supplies (SMPS). They allow for greater power efficiency, smaller size, lighter weight, and eventually lower overall cost. However, their higher switching speeds also introduce new design challenges. The inductance of layout parasitics can cause voltage spikes in the presence of high di/dt values. It can also generate unwanted conducted and radiated electromagnetic interferences (EMI). When unaccounted for, these factors could cause your design to fail.